 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2010. 8. 18 1/6 semiconductor technical data KF4N20LW n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for led lighting and switching mode power supplies. features h v dss(min.) = 200v, i d = 1a h drain-source on resistance : r ds(on) =1.05 ? (max) @v gs =10v h qg(typ.) =2.9nc h v th(max.) = 2v maximum rating (tc=25 ? ) * : surface mounted on fr4 board (40mm ? 40mm, 1.0t) characteristic symbol rating unit drain-source voltage v dss 200 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 1* a @t c =100 ? 0.6* pulsed (note1) i dp 4* single pulsed avalanche energy (note 2) e as 52 mj repetitive avalanche energy (note 1) e ar 0.2 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation t a =25 ? p d 2.2* w derate above25 ? 0.018 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to- ambient r thja 57* ? /w pin connection
2010. 8. 18 2/6 KF4N20LW revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l = 78mh, i s =1a, v dd =50v, r g = 25 ? , starting t j = 25 ? . note 3) i s ? 2a, di/dt ? 300a/ k , v dd ? bv dss , starting t j = 25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. KF4N20LW marking d4cdyl4y lra- 4cl4 akdy4yak ryki 4i ri ky4 static degrllaoepu eugkahl awngmu dll y d se 0 , 4 /, 1 1 , : @&#,$ % ! 7 "" :, + c ( + /2 0 " &2 ? 1 1 , ? + 7!1""7! ( + , + /, , 4 /, 1 1 0 4 &,$ , , + /, 4 ( + /2 0 1 , 4 * @$ 7! ( 4 , 4 / ? , , + /, 1 1 ? 0 + 1! +-. , 4 /, ( + /20 1 2 2 ? , 4 /2, ( + /20 6 dynamic 4angw gnu 2gemu m dl met y d in l kanut si ic l gnulaoepu 2gemu mh ein gnudegrl 2gemu mk sis 4oelal duwgu nrpu n kal dd meet y d in d s ? - 9 2. , 4 /2, 1 1 !1 % 1 1 !1""+ ) % &-"". 1 2 1 !1"" % " 1 2 1 (!7 7 , + /2, , 4 /, "/;h 1 d !!7 7 1 2 1 " 7 7 1 9 1 source-drain diode ratings alnrloaoh laoepu oeeuln y l l n2 m owhuk laoepu oeeuln y l draku saehgek awngmu ld y l mt l e mi dutuehu dupatueu 4rpu n ee y l int l et kyhoknmeeo k 1 1 )7$ 5 1 a 1 7 2010. 8. 18 3/6 KF4N20LW revision no : 0 v gs = 3v 0 3.0 2.5 2.0 1.5 1.0 0.5 246 6 8 2010. 8. 18 4/6 KF4N20LW revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 1 10 -1 10 0 10 0 10- 2 10 2 10 3 0 0.6 0.2 0.4 1.2 1.0 0.8 75 150 125 50 100 025 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 1 10 100 1000 0 5 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s operation in this area is limited by r ds(on) 0 12 10 6 2 4 8 78 3 1 5 4 6 2 0 i d =4a v ds = 40v v ds = 160v 100ms 10 s time (sec) fig11. transient thermal response curve transient thermal resistance 10 -5 10 -3 10 -2 10 -1 10 0 10 3 10 1 10 2 10 -4 10 -2 10 -1 10 2 10 1 10 0 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm sin gle pulse duty =0.5 0.02 0.0 5 0.10 0.20 0.01 2010. 8. 18 5/6 KF4N20LW revision no : 0 fig12. gate charge i d v ds v gs v gs v ds v gs 1.0 ma r l 10v 5 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss 2010. 8. 18 6/6 KF4N20LW revision no : 0 fig15. source - drain diode reverse recovery and dv /dt l i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss |
Price & Availability of KF4N20LW
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |